SQJ160EP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 362A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6697 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
| Кількість | Ціна |
|---|---|
| 3+ | 129.87 грн |
| 10+ | 104.11 грн |
| 100+ | 82.91 грн |
Відгуки про товар
Написати відгук
Технічний опис SQJ160EP-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 6697 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 362A (Tc), FET Type: N-Channel.
Інші пропозиції SQJ160EP-T1_GE3 за ціною від 67.25 грн до 140.36 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQJ160EP-T1_GE3 | Виробник : Vishay Semiconductors |
MOSFET N-CHANNEL 60-V (D-S) 175C AEC-Q101 |
на замовлення 2737 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
| SQJ160EP-T1_GE3 | Виробник : Vishay Siliconix |
MOSFET N-CHANNEL 60-V (D-S) 175C, PowerPAK SO-8 Група товару: Транзистори Од. вим: шт |
товару немає в наявності |
||||||||||||||||
|
|
SQJ160EP-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6697 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 362A (Tc) FET Type: N-Channel |
товару немає в наявності |