SQJ164ELP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 3000+ | 36.04 грн |
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Технічний опис SQJ164ELP-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V, Power Dissipation (Max): 187W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V.
Інші пропозиції SQJ164ELP-T1_GE3 за ціною від 29.07 грн до 127.38 грн
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SQJ164ELP-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 60 V (D-S) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SQJ164ELP-T1_GE3 | Виробник : Vishay Semiconductors |
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET |
на замовлення 8627 шт: термін постачання 21-30 дні (днів) |
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