SQJ182EP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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Технічний опис SQJ182EP-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 395W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 210A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Інші пропозиції SQJ182EP-T1_GE3 за ціною від 40.25 грн до 162.81 грн
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SQJ182EP-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 395W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SQJ182EP-T1_GE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET |
на замовлення 31753 шт: термін постачання 21-30 дні (днів) |
|
| SQJ182EP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 108.63 грн |
| 10+ | 87.50 грн |
| 100+ | 68.29 грн |
| 500+ | 51.20 грн |
| 1000+ | 47.05 грн |
| SQJ182EP-T1_GE3 |
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Виробник: Vishay / Siliconix
MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET
MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET
на замовлення 31753 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 162.81 грн |
| 10+ | 102.94 грн |
| 100+ | 61.25 грн |
| 500+ | 48.77 грн |
| 1000+ | 46.52 грн |
| 3000+ | 40.25 грн |