SQJ200EP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 20A/60A PPAK SO
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Drain to Source Voltage (Vdss): 20V
Power - Max: 27W, 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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Технічний опис SQJ200EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 20A/60A PPAK SO, Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Vgs(th) (Max) @ Id: 2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 20A, 60A, Drain to Source Voltage (Vdss): 20V, Power - Max: 27W, 48W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).
Інші пропозиції SQJ200EP-T1_GE3 за ціною від 30.38 грн до 131.16 грн
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SQJ200EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 20A/60A PPAK SO Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V Current - Continuous Drain (Id) @ 25°C: 20A, 60A Drain to Source Voltage (Vdss): 20V Power - Max: 27W, 48W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SQJ200EP-T1_GE3 | Vishay / Siliconix |
MOSFETs Dual N Ch 20V Vds AEC-Q101 Qualified |
на замовлення 1948 шт: термін постачання 21-30 дні (днів) |
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| SQJ200EP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 20A/60A PPAK SO
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Drain to Source Voltage (Vdss): 20V
Power - Max: 27W, 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 20A/60A PPAK SO
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Drain to Source Voltage (Vdss): 20V
Power - Max: 27W, 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 95.05 грн |
| 10+ | 81.62 грн |
| 100+ | 63.66 грн |
| 500+ | 49.36 грн |
| 1000+ | 38.97 грн |
| SQJ200EP-T1_GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs Dual N Ch 20V Vds AEC-Q101 Qualified
MOSFETs Dual N Ch 20V Vds AEC-Q101 Qualified
на замовлення 1948 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 131.16 грн |
| 10+ | 81.91 грн |
| 100+ | 47.83 грн |
| 500+ | 37.78 грн |
| 1000+ | 34.56 грн |
| 3000+ | 30.38 грн |