SQJ202EP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Drain to Source Voltage (Vdss): 12V
Power - Max: 27W, 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.89 грн |
| 10+ | 79.53 грн |
| 100+ | 61.88 грн |
| 500+ | 49.23 грн |
| 1000+ | 40.10 грн |
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Технічний опис SQJ202EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Vgs(th) (Max) @ Id: 2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 20A, 60A, Drain to Source Voltage (Vdss): 12V, Power - Max: 27W, 48W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR).
Інші пропозиції SQJ202EP-T1_GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
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SQJ202EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 12V 20A PPAK SO8 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V Current - Continuous Drain (Id) @ 25°C: 20A, 60A Drain to Source Voltage (Vdss): 12V Power - Max: 27W, 48W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
 |
SQJ202EP-T1_GE3 | Vishay / Siliconix |
MOSFETs Dual N Ch 12V Vds AEC-Q101 Qualified |
товару немає в наявності |
В кошику од. на суму грн. |
| SQJ202EP-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; PowerPAK® SO8 Mounting: SMD Polarisation: unipolar Technology: TrenchFET® Kind of channel: enhancement Drain-source voltage: 12V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerPAK® SO8 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SQJ202EP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Drain to Source Voltage (Vdss): 12V
Power - Max: 27W, 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 20A, 60A
Drain to Source Voltage (Vdss): 12V
Power - Max: 27W, 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SQJ202EP-T1_GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs Dual N Ch 12V Vds AEC-Q101 Qualified
MOSFETs Dual N Ch 12V Vds AEC-Q101 Qualified
товару немає в наявності
В кошику
од. на суму грн.
| SQJ202EP-T1_GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; PowerPAK® SO8
Mounting: SMD
Polarisation: unipolar
Technology: TrenchFET®
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 12V; PowerPAK® SO8
Mounting: SMD
Polarisation: unipolar
Technology: TrenchFET®
Kind of channel: enhancement
Drain-source voltage: 12V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.