SQJ202EP-T2_GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET 2N-CH 12V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 39.48 грн |
| 6000+ | 35.50 грн |
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Технічний опис SQJ202EP-T2_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W (Tc), 48W (Tc), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V, Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SQJ202EP-T2_GE3 за ціною від 40.42 грн до 143.74 грн
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SQJ202EP-T2_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 12V 20A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc), 48W (Tc) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 6V, 2525pF @ 6V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 54nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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| SQJ202EP-T2_GE3 | Виробник : Vishay / Siliconix |
MOSFET DUAL N-CHANNEL 12-V (D-S) 175C MOSFETS |
товару немає в наявності |