SQJ204EP-T1_GE3 Vishay Siliconix

Description: MOSFET 2N-CH 12V 20A PPAK SO8, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V, Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc), Drain to Source Voltage (Vdss): 12V, Power - Max: 27W (Tc), 48W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR).