SQJ204EP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Power - Max: 27W (Tc), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис SQJ204EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V, Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc), Drain to Source Voltage (Vdss): 12V, Power - Max: 27W (Tc), 48W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR).
Інші пропозиції SQJ204EP-T1_GE3 за ціною від 37.29 грн до 152.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SQJ204EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 12V 20A PPAK SO8Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Drain to Source Voltage (Vdss): 12V Power - Max: 27W (Tc), 48W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
на замовлення 7840 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SQJ204EP-T1_GE3 | Vishay / Siliconix |
MOSFETs 12V Vds -/+12V Vgs PowerPAK SO-8L |
на замовлення 2890 шт: термін постачання 21-30 дні (днів) |
|
| SQJ204EP-T1_GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Power - Max: 27W (Tc), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 12V 20A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 50nC @ 10V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 4A, 10V, 3mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 6V, 3700pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 12V
Power - Max: 27W (Tc), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
на замовлення 7840 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 135.90 грн |
| 10+ | 83.51 грн |
| 100+ | 56.44 грн |
| 500+ | 42.09 грн |
| 1000+ | 39.65 грн |
| SQJ204EP-T1_GE3 |
![]() |
Виробник: Vishay / Siliconix
MOSFETs 12V Vds -/+12V Vgs PowerPAK SO-8L
MOSFETs 12V Vds -/+12V Vgs PowerPAK SO-8L
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 152.34 грн |
| 10+ | 96.36 грн |
| 100+ | 56.28 грн |
| 500+ | 44.76 грн |
| 1000+ | 40.99 грн |
| 3000+ | 37.29 грн |


