SQJ244EP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 20A PPAK SO8
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 45nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V, 2800pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 27W (Tc), 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Vgs(th) (Max) @ Id: 2.5V @ 250µA
| Кількість | Ціна |
|---|---|
| 3000+ | 37.64 грн |
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Технічний опис SQJ244EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 40V 20A PPAK SO8, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 45nC @ 10V, Rds On (Max) @ Id, Vgs: 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V, 2800pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 27W (Tc), 48W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual) Asymmetrical, Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Vgs(th) (Max) @ Id: 2.5V @ 250µA.
Інші пропозиції SQJ244EP-T1_GE3 за ціною від 37.07 грн до 151.71 грн
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SQJ244EP-T1_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 40V 20A PPAK SO8 Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 45nC @ 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 4A, 10V, 4.5mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V, 2800pF @ 25V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 27W (Tc), 48W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Vgs(th) (Max) @ Id: 2.5V @ 250µA |
на замовлення 3911 шт: термін постачання 21-31 дні (днів) |
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SQJ244EP-T1_GE3 | Виробник : Vishay Semiconductors |
MOSFETs 40V Vds -/+20V Vgs PowerPAK SO-8L |
на замовлення 5708 шт: термін постачання 21-30 дні (днів) |
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