SQJ264EP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 20A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 47.43 грн |
| 6000+ | 42.80 грн |
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Технічний опис SQJ264EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 60V 20A PPAK SO8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W (Tc), 48W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V, Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SQJ264EP-T1_GE3 за ціною від 44.67 грн до 173.16 грн
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SQJ264EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 20A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc), 48W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7700 шт: термін постачання 21-31 дні (днів) |
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SQJ264EP-T1_GE3 | Vishay Semiconductors |
MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFE |
на замовлення 376 шт: термін постачання 21-30 дні (днів) |
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| SQJ264EP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 20A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc), 48W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc), 54A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 25V, 2100pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V, 8.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 166.20 грн |
| 10+ | 102.61 грн |
| 100+ | 69.90 грн |
| 500+ | 52.45 грн |
| 1000+ | 48.23 грн |
| SQJ264EP-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFE
MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFE
на замовлення 376 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.16 грн |
| 10+ | 109.56 грн |
| 100+ | 65.31 грн |
| 500+ | 51.84 грн |
| 1000+ | 47.70 грн |
| 3000+ | 44.67 грн |