SQJ402EP-T1_BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10.7A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2286 pF @ 25 V
| Кількість | Ціна |
|---|---|
| 3000+ | 49.48 грн |
| 6000+ | 45.85 грн |
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Технічний опис SQJ402EP-T1_BE3 Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 10.7A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2286 pF @ 25 V.
Інші пропозиції SQJ402EP-T1_BE3 за ціною від 47.06 грн до 115.94 грн
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SQJ402EP-T1_BE3 | Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) 175C MOSFE Input Capacitance (Ciss) (Max) @ Vds: 2286 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10.7A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 6949 шт: термін постачання 21-31 дні (днів) |
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SQJ402EP-T1_BE3 | Vishay |
MOSFET N-CHANNEL 100-V (D-S) 175C MOSFET |
на замовлення 2720 шт: термін постачання 21-30 дні (днів) |
|
| SQJ402EP-T1_BE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2286 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Input Capacitance (Ciss) (Max) @ Vds: 2286 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 6949 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 109.42 грн |
| 10+ | 87.81 грн |
| 100+ | 69.85 грн |
| 500+ | 55.47 грн |
| 1000+ | 47.06 грн |
| SQJ402EP-T1_BE3 |
|
Виробник: Vishay
MOSFET N-CHANNEL 100-V (D-S) 175C MOSFET
MOSFET N-CHANNEL 100-V (D-S) 175C MOSFET
на замовлення 2720 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 115.94 грн |
| 10+ | 94.83 грн |
| 100+ | 66.18 грн |
| 250+ | 60.54 грн |
| 500+ | 55.89 грн |
| 3000+ | 47.43 грн |