SQJ403BEEP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 30V 30A PPAK SO-8
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 3+ | 144.73 грн |
| 10+ | 89.20 грн |
| 100+ | 60.49 грн |
| 500+ | 45.22 грн |
| 1000+ | 43.16 грн |
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Технічний опис SQJ403BEEP-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 30A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V, Qualification: AEC-Q101.
Інші пропозиції SQJ403BEEP-T1_GE3 за ціною від 40.06 грн до 149.28 грн
| Фото | Назва | Виробник | Інформація |
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SQJ403BEEP-T1_GE3 | Виробник : Vishay Semiconductors |
MOSFETs P Ch -30Vds 20Vgs AEC-Q101 Qualified |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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SQJ403BEEP-T1_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 30V 30A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
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| SQJ403BEEP-T1_GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -30A; 68W; PowerPAK® SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -30A Power dissipation: 68W Case: PowerPAK® SO8 On-state resistance: 7mΩ Mounting: SMD Gate charge: 164nC Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |