| Кількість | Ціна |
|---|---|
| 4+ | 108.54 грн |
| 10+ | 88.35 грн |
| 100+ | 59.91 грн |
| 500+ | 50.82 грн |
| 1000+ | 41.37 грн |
| 2500+ | 40.03 грн |
| 5000+ | 37.07 грн |
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Технічний опис SQJ409EP-T1_BE3 Vishay
Description: P-CHANNEL 40-V (D-S) 175C MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 68W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Інші пропозиції SQJ409EP-T1_BE3 за ціною від 45.25 грн до 114.18 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQJ409EP-T1_BE3 | Vishay Siliconix |
 Description: P-CHANNEL 40-V (D-S) 175C MOSFETInput Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 2690 шт: термін постачання 21-31 дні (днів) |
|
| SQJ409EP-T1_BE3 |
|
Виробник: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 2690 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 114.18 грн |
| 10+ | 89.79 грн |
| 100+ | 69.84 грн |
| 500+ | 55.55 грн |
| 1000+ | 45.25 грн |