SQJ423EP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 55A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 31.97 грн |
| 6000+ | 29.32 грн |
| 9000+ | 27.96 грн |
Відгуки про товар
Написати відгук
Технічний опис SQJ423EP-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 40V 55A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції SQJ423EP-T1_GE3 за ціною від 27.27 грн до 80.54 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SQJ423EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 55A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 17269 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
SQJ423EP-T1_GE3 | Vishay Semiconductors |
MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified |
на замовлення 111632 шт: термін постачання 21-30 дні (днів) |
|
| SQJ423EP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 55A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 55A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Qualification: AEC-Q101
на замовлення 17269 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 77.66 грн |
| 10+ | 60.88 грн |
| 100+ | 47.36 грн |
| 500+ | 37.67 грн |
| 1000+ | 30.69 грн |
| SQJ423EP-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
на замовлення 111632 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.54 грн |
| 10+ | 65.10 грн |
| 100+ | 44.04 грн |
| 500+ | 37.35 грн |
| 1000+ | 30.44 грн |
| 3000+ | 28.65 грн |
| 6000+ | 27.27 грн |