SQJ431AEP-T1_BE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: P-CHANNEL 200-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 46.63 грн |
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Технічний опис SQJ431AEP-T1_BE3 Vishay Siliconix
Description: P-CHANNEL 200-V (D-S) 175C MOSFE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc), Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції SQJ431AEP-T1_BE3 за ціною від 44.36 грн до 102.75 грн
| Фото | Назва | Виробник | Інформація |
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SQJ431AEP-T1_BE3 | Виробник : Vishay Siliconix |
Description: P-CHANNEL 200-V (D-S) 175C MOSFE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 305mOhm @ 3.8A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5332 шт: термін постачання 21-31 дні (днів) |
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| SQJ431AEP-T1_BE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -9.4A Pulsed drain current: -60A Power dissipation: 68W Gate-source voltage: ±20V On-state resistance: 763mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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| SQJ431AEP-T1-BE3 | Виробник : Vishay | MOSFET P-CHANNEL 200-V (D-S) 175C |
товар відсутній |
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| SQJ431AEP-T1_BE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -200V; -9.4A; Idm: -60A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -9.4A Pulsed drain current: -60A Power dissipation: 68W Gate-source voltage: ±20V On-state resistance: 763mΩ Mounting: SMD Gate charge: 85nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |