SQJ431EP-T2_GE3 Vishay Siliconix

Description: MOSFET P-CH 200V 12A PPAK SO-8, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Grade: Automotive, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 213mOhm @ 3.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).