SQJ474EP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 26A PPAK SO-8
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
| Кількість | Ціна |
|---|---|
| 3000+ | 25.90 грн |
| 6000+ | 24.09 грн |
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Технічний опис SQJ474EP-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 26A PPAK SO-8, Qualification: AEC-Q101, Grade: Automotive, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8.
Інші пропозиції SQJ474EP-T1_GE3 за ціною від 23.40 грн до 87.16 грн
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SQJ474EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 26A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Qualification: AEC-Q101 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Grade: Automotive |
на замовлення 26240 шт: термін постачання 21-31 дні (днів) |
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SQJ474EP-T1_GE3 | Vishay Semiconductors |
MOSFETs N Ch 100Vds 20Vgs AEC-Q101 Qualified |
на замовлення 4840 шт: термін постачання 21-30 дні (днів) |
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| SQJ474EP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 26A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Qualification: AEC-Q101
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Grade: Automotive
Description: MOSFET N-CH 100V 26A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Qualification: AEC-Q101
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Grade: Automotive
на замовлення 26240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 84.05 грн |
| 10+ | 54.59 грн |
| 100+ | 37.98 грн |
| 500+ | 28.65 грн |
| 1000+ | 26.35 грн |
| SQJ474EP-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs N Ch 100Vds 20Vgs AEC-Q101 Qualified
MOSFETs N Ch 100Vds 20Vgs AEC-Q101 Qualified
на замовлення 4840 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 87.16 грн |
| 10+ | 57.79 грн |
| 100+ | 38.13 грн |
| 500+ | 31.44 грн |
| 1000+ | 26.36 грн |
| 3000+ | 23.40 грн |