SQJ476EP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 23A PPAK SO-8
FET Type: N-Channel
Qualification: AEC-Q101
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
| Кількість | Ціна |
|---|---|
| 3000+ | 23.97 грн |
| 6000+ | 21.39 грн |
| 9000+ | 20.92 грн |
Відгуки про товар
Написати відгук
Технічний опис SQJ476EP-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 23A PPAK SO-8, FET Type: N-Channel, Qualification: AEC-Q101, Grade: Automotive, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V.
Інші пропозиції SQJ476EP-T1_GE3 за ціною від 21.07 грн до 77.71 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SQJ476EP-T1_GE3 | Vishay / Siliconix |
MOSFETs N Ch 100Vds 20Vgs AEC-Q101 Qualified |
на замовлення 14637 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
SQJ476EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 23A PPAK SO-8Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 45W (Tc) Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 12763 шт: термін постачання 21-31 дні (днів) |
|
| SQJ476EP-T1_GE3 |
![]() |
Виробник: Vishay / Siliconix
MOSFETs N Ch 100Vds 20Vgs AEC-Q101 Qualified
MOSFETs N Ch 100Vds 20Vgs AEC-Q101 Qualified
на замовлення 14637 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 24.24 грн |
| 3000+ | 21.07 грн |
| SQJ476EP-T1_GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 100V 23A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 23A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 12763 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 77.71 грн |
| 10+ | 52.00 грн |
| 100+ | 35.67 грн |
| 500+ | 27.28 грн |
| 1000+ | 24.80 грн |



