SQJ740EP-T1_GE3 Vishay / Siliconix
Виробник: Vishay / Siliconix
MOSFETs Automotive Dual N-Channel 40 V (D-S) 175C MOSFET PowerPAK SO-8L BWL, 3.4 mohm a. 10V
| Кількість | Ціна |
|---|---|
| 2+ | 177.59 грн |
| 10+ | 121.26 грн |
| 100+ | 73.32 грн |
| 500+ | 59.63 грн |
| 1000+ | 55.16 грн |
| 3000+ | 52.93 грн |
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Технічний опис SQJ740EP-T1_GE3 Vishay / Siliconix
Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (, Supplier Device Package: PowerPAK® SO-8L Dual BWL, Vgs(th) (Max) @ Id: 3.5V @ 250µA, FET Feature: Standard, Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V, Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 123A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 93W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel, Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR), Part Status: Active.
Інші пропозиції SQJ740EP-T1_GE3 за ціною від 130.34 грн до 150.83 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||
|---|---|---|---|---|---|---|---|---|---|
| SQJ740EP-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE DUAL N-CHANNEL 40 V ( Part Status: Active Supplier Device Package: PowerPAK® SO-8L Dual BWL Vgs(th) (Max) @ Id: 3.5V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V Current - Continuous Drain (Id) @ 25°C: 123A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 93W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
|
| SQJ740EP-T1_GE3 |
Виробник: Vishay Siliconix
Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (
Part Status: Active
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Vgs(th) (Max) @ Id: 3.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 93W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Description: AUTOMOTIVE DUAL N-CHANNEL 40 V (
Part Status: Active
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Vgs(th) (Max) @ Id: 3.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3143pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 93W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 150.83 грн |
| 10+ | 130.34 грн |