SQJ742EP-T1_GE3 VISHAY
Виробник: VISHAY
Description: VISHAY - SQJ742EP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 99 A, 0.009 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
Dauer-Drainstrom Id, n-Kanal: 99A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 40V
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.009ohm
productTraceability: No
usEccn: EAR99
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 88W
Betriebstemperatur, max.: 175°C
Відгуки про товар
Написати відгук
Технічний опис SQJ742EP-T1_GE3 VISHAY
Description: VISHAY - SQJ742EP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 99 A, 0.009 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: -, Dauer-Drainstrom Id, n-Kanal: 99A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 40V, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 4Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.009ohm, productTraceability: No, usEccn: EAR99, Kanaltyp: Zweifach n-Kanal, Verlustleistung, n-Kanal: 88W, Betriebstemperatur, max.: 175°C.
Інші пропозиції SQJ742EP-T1_GE3 за ціною від 36.00 грн до 130.54 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SQJ742EP-T1_GE3 | Vishay Siliconix |
Description: DUAL N-CHANNEL 40-V (D-S) 175C M Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 88W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 99A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2449pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8L Dual BWL Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||
| SQJ742EP-T1_GE3 | Vishay Siliconix |
Description: DUAL N-CHANNEL 40-V (D-S) 175C M Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 88W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 99A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2449pF @ 25V Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8L Dual BWL Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
| SQJ742EP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 88W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2449pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Grade: Automotive
Qualification: AEC-Q101
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 88W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2449pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 36.00 грн |
| SQJ742EP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 88W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2449pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Grade: Automotive
Qualification: AEC-Q101
Description: DUAL N-CHANNEL 40-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 88W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2449pF @ 25V
Rds On (Max) @ Id, Vgs: 5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8L Dual BWL
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 130.54 грн |
| 10+ | 80.00 грн |
| 100+ | 53.96 грн |
| 500+ | 40.17 грн |
| 1000+ | 37.49 грн |