SQJ850EP-T2_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
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Технічний опис SQJ850EP-T2_GE3 Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) 175C MOSFET, Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 45W (Tc).
Інші пропозиції SQJ850EP-T2_GE3 за ціною від 37.50 грн до 150.71 грн
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SQJ850EP-T2_GE3 | Vishay Siliconix |
Description: N-CHANNEL 60-V (D-S) 175C MOSFET Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 8710 шт: термін постачання 21-31 дні (днів) |
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SQJ850EP-T2_GE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET |
на замовлення 51235 шт: термін постачання 21-30 дні (днів) |
|
| SQJ850EP-T2_GE3 |
|
Виробник: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 10.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 8710 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 116.26 грн |
| 10+ | 85.33 грн |
| 100+ | 63.33 грн |
| 500+ | 48.56 грн |
| 1000+ | 42.67 грн |
| SQJ850EP-T2_GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
на замовлення 51235 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 150.71 грн |
| 10+ | 95.56 грн |
| 100+ | 55.65 грн |
| 500+ | 44.20 грн |
| 1000+ | 40.57 грн |
| 3000+ | 38.54 грн |
| 6000+ | 37.50 грн |