SQJ858AEP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
Qualification: AEC-Q101
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Технічний опис SQJ858AEP-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V, Power Dissipation (Max): 48W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції SQJ858AEP-T1_GE3 за ціною від 30.51 грн до 131.28 грн
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SQJ858AEP-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 58A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) |
на замовлення 5666 шт: термін постачання 21-31 дні (днів) |
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SQJ858AEP-T1_GE3 | Vishay Semiconductors |
MOSFETs 40V 58A 48W AEC-Q101 Qualified |
на замовлення 3499 шт: термін постачання 21-30 дні (днів) |
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| SQJ858AEP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 58A PPAK SO-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Description: MOSFET N-CH 40V 58A PPAK SO-8
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
на замовлення 5666 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 98.63 грн |
| 10+ | 64.17 грн |
| 100+ | 48.10 грн |
| 500+ | 35.66 грн |
| 1000+ | 32.60 грн |
| SQJ858AEP-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 40V 58A 48W AEC-Q101 Qualified
MOSFETs 40V 58A 48W AEC-Q101 Qualified
на замовлення 3499 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.28 грн |
| 10+ | 82.56 грн |
| 100+ | 47.98 грн |
| 500+ | 37.90 грн |
| 1000+ | 34.66 грн |
| 3000+ | 30.51 грн |