SQJ910AEP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A PPAK SO8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 48W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис SQJ910AEP-T1_GE3 Vishay Siliconix
Description: VISHAY - SQJ910AEP-T1_GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 5800 µohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 30A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 30V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 30A, Drain-Source-Durchgangswiderstand, p-Kanal: 5800µohm, Verlustleistung, p-Kanal: 48W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 4Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 5800µohm, productTraceability: No, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 48W, Betriebstemperatur, max.: 175°C, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції SQJ910AEP-T1_GE3 за ціною від 30.10 грн до 146.90 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQJ910AEP-T1_GE3 | VISHAY |
Description: VISHAY - SQJ910AEP-T1_GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 5800 µohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: 5800µohm Verlustleistung, p-Kanal: 48W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAK SO Anzahl der Pins: 4Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 5800µohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 48W Betriebstemperatur, max.: 175°C SVHC: No SVHC (25-Jun-2025) |
на замовлення 10544 шт: термін постачання 21-31 дні (днів) |
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SQJ910AEP-T1_GE3 | Vishay / Siliconix |
MOSFETs Dual N-Channel 30V AEC-Q101 Qualified |
на замовлення 2046 шт: термін постачання 21-30 дні (днів) |
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SQJ910AEP-T1_GE3 | VISHAY |
Description: VISHAY - SQJ910AEP-T1_GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 5800 µohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: 5800µohm Verlustleistung, p-Kanal: 48W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAK SO Anzahl der Pins: 4Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 5800µohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 48W Betriebstemperatur, max.: 175°C SVHC: No SVHC (25-Jun-2025) |
на замовлення 10544 шт: термін постачання 21-31 дні (днів) |
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SQJ910AEP-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 30A PPAK SO8 Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 48W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
на замовлення 5945 шт: термін постачання 21-31 дні (днів) |
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| SQJ910AEP-T1_GE3 |
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Виробник: VISHAY
Description: VISHAY - SQJ910AEP-T1_GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 5800 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 5800µohm
Verlustleistung, p-Kanal: 48W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 5800µohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 48W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
Description: VISHAY - SQJ910AEP-T1_GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 5800 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 5800µohm
Verlustleistung, p-Kanal: 48W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 5800µohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 48W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
на замовлення 10544 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 59.55 грн |
| 500+ | 40.40 грн |
| 1000+ | 34.15 грн |
| 5000+ | 30.10 грн |
| SQJ910AEP-T1_GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs Dual N-Channel 30V AEC-Q101 Qualified
MOSFETs Dual N-Channel 30V AEC-Q101 Qualified
на замовлення 2046 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 136.86 грн |
| 10+ | 86.73 грн |
| 100+ | 50.49 грн |
| 500+ | 40.08 грн |
| 1000+ | 37.43 грн |
| 3000+ | 34.91 грн |
| SQJ910AEP-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQJ910AEP-T1_GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 5800 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 5800µohm
Verlustleistung, p-Kanal: 48W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 5800µohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 48W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
Description: VISHAY - SQJ910AEP-T1_GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 30 A, 30 A, 5800 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 5800µohm
Verlustleistung, p-Kanal: 48W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 4Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 5800µohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 48W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (25-Jun-2025)
на замовлення 10544 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 138.49 грн |
| 10+ | 88.80 грн |
| 100+ | 59.55 грн |
| 500+ | 40.40 грн |
| 1000+ | 34.15 грн |
| 5000+ | 30.10 грн |
| SQJ910AEP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 30A PPAK SO8
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET 2N-CH 30V 30A PPAK SO8
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1869pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
на замовлення 5945 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 146.90 грн |
| 10+ | 83.44 грн |
| 100+ | 60.83 грн |
| 500+ | 45.29 грн |
| 1000+ | 40.53 грн |