| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.00 грн |
| 10+ | 94.47 грн |
| 100+ | 55.43 грн |
| 500+ | 44.18 грн |
| 1000+ | 41.42 грн |
| 3000+ | 35.90 грн |
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Технічний опис SQJ951EP-T1_BE3 Vishay Semiconductors
Description: MOSFET 2P-CH 30V 30A PPAK SO8, Supplier Device Package: PowerPAK® SO-8 Dual, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V, Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 56W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції SQJ951EP-T1_BE3 за ціною від 44.21 грн до 153.77 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQJ951EP-T1_BE3 | Vishay Siliconix |
 Description: MOSFET 2P-CH 30V 30A PPAK SO8Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 56W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2833 шт: термін постачання 21-31 дні (днів) |
|
| SQJ951EP-T1_BE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 30A PPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 56W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2P-CH 30V 30A PPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 7.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 56W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2833 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 153.77 грн |
| 10+ | 94.98 грн |
| 100+ | 64.41 грн |
| 500+ | 48.16 грн |
| 1000+ | 44.21 грн |