SQJ963EP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
Operating Temperature: -55°C ~ 175°C (TA)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Відгуки про товар
Написати відгук
Технічний опис SQJ963EP-T1_GE3 Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A PPAK SO8, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: PowerPAK® SO-8 Dual, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Drain to Source Voltage (Vdss): 60V, Operating Temperature: -55°C ~ 175°C (TA), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR), Power - Max: 27W (Tc), Technology: MOSFET (Metal Oxide).
Інші пропозиції SQJ963EP-T1_GE3 за ціною від 51.18 грн до 186.18 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQJ963EP-T1_GE3 | Vishay Semiconductors |
MOSFETs -60V -8A 27W AEC-Q101 Qualified |
на замовлення 18140 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
SQJ963EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2P-CH 60V 8A PPAK SO8 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 27W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TA) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V |
на замовлення 3527 шт: термін постачання 21-31 дні (днів) |
|
| SQJ963EP-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs -60V -8A 27W AEC-Q101 Qualified
MOSFETs -60V -8A 27W AEC-Q101 Qualified
на замовлення 18140 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 169.45 грн |
| 10+ | 114.03 грн |
| 100+ | 74.02 грн |
| 250+ | 64.80 грн |
| 500+ | 60.40 грн |
| 1000+ | 55.79 грн |
| 3000+ | 51.18 грн |
| SQJ963EP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TA)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Description: MOSFET 2P-CH 60V 8A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TA)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
на замовлення 3527 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 186.18 грн |
| 10+ | 115.66 грн |
| 100+ | 79.25 грн |
| 500+ | 59.74 грн |
| 1000+ | 55.04 грн |