| Кількість | Ціна |
|---|---|
| 4+ | 93.74 грн |
| 10+ | 76.11 грн |
| 100+ | 51.38 грн |
| 500+ | 43.56 грн |
| 1000+ | 41.09 грн |
| 3000+ | 34.96 грн |
| 6000+ | 32.70 грн |
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Технічний опис SQJ974EP-T1_BE3 Vishay
Description: DUAL N-CHANNEL 100-V (D-S) 175C, Supplier Device Package: PowerPAK® SO-8 Dual, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Drain to Source Voltage (Vdss): 100V, Power - Max: 48W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR).
Інші пропозиції SQJ974EP-T1_BE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SQJ974EP-T1_BE3 | Vishay Siliconix |
 Description: DUAL N-CHANNEL 100-V (D-S) 175CSupplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 100V Power - Max: 48W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
|
SQJ974EP-T1_BE3 | Vishay Siliconix |
Description: DUAL N-CHANNEL 100-V (D-S) 175C Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 100V Power - Max: 48W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V |
товару немає в наявності |
В кошику од. на суму грн. |
| SQJ974EP-T1-BE3 | Vishay | MOSFET DUAL N-CHANNEL 100-V (D-S) 175 |
товару немає в наявності |
В кошику од. на суму грн. |
| SQJ974EP-T1_BE3 |
|
Виробник: Vishay Siliconix
Description: DUAL N-CHANNEL 100-V (D-S) 175C
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Description: DUAL N-CHANNEL 100-V (D-S) 175C
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SQJ974EP-T1_BE3 |
|
Виробник: Vishay Siliconix
Description: DUAL N-CHANNEL 100-V (D-S) 175C
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Description: DUAL N-CHANNEL 100-V (D-S) 175C
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 48W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
товару немає в наявності
В кошику
од. на суму грн.
| SQJ974EP-T1-BE3 |
Виробник: Vishay
MOSFET DUAL N-CHANNEL 100-V (D-S) 175
MOSFET DUAL N-CHANNEL 100-V (D-S) 175
товару немає в наявності
В кошику
од. на суму грн.