SQJ974EP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 100V 30A PPAK SO8
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
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Технічний опис SQJ974EP-T1_GE3 Vishay Siliconix
Description: VISHAY - SQJ974EP-T1_GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 30 A, 30 A, 0.021 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 30A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 100V, Dauer-Drainstrom Id, n-Kanal: 30A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm, Verlustleistung, p-Kanal: 48W, Drain-Source-Spannung Vds, n-Kanal: 100V, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 48W, Betriebstemperatur, max.: 175°C.
Інші пропозиції SQJ974EP-T1_GE3 за ціною від 39.70 грн до 122.16 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SQJ974EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 100V 30A PPAK SO8 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 100V Power - Max: 48W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
на замовлення 4790 шт: термін постачання 21-31 дні (днів) |
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SQJ974EP-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 17A Power dissipation: 16W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 25.5mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2839 шт: термін постачання 14-30 дні (днів) |
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SQJ974EP-T1_GE3 | Vishay Semiconductors |
MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified |
на замовлення 59147 шт: термін постачання 519-528 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SQJ974EP-T1_GE3 | VISHAY |
Description: VISHAY - SQJ974EP-T1_GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 30 A, 30 A, 0.021 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 100V Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm Verlustleistung, p-Kanal: 48W Drain-Source-Spannung Vds, n-Kanal: 100V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 48W Betriebstemperatur, max.: 175°C |
на замовлення 1198 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SQJ974EP-T1_GE3 | VISHAY |
Description: VISHAY - SQJ974EP-T1_GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 30 A, 30 A, 0.021 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 100V Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm Verlustleistung, p-Kanal: 48W Drain-Source-Spannung Vds, n-Kanal: 100V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 48W Betriebstemperatur, max.: 175°C |
на замовлення 1198 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| SQJ974EP-T1_GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 100V 30A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 100V 30A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 48W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
на замовлення 4790 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 100.48 грн |
| 10+ | 78.78 грн |
| 100+ | 61.27 грн |
| 500+ | 48.74 грн |
| 1000+ | 39.70 грн |
| SQJ974EP-T1_GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 17A; 16W; PowerPAK® SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17A
Power dissipation: 16W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 25.5mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2839 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 122.16 грн |
| 10+ | 77.03 грн |
| 25+ | 65.18 грн |
| 100+ | 52.48 грн |
| 500+ | 51.64 грн |
| SQJ974EP-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified
на замовлення 59147 шт:
термін постачання 519-528 дні (днів)
| SQJ974EP-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQJ974EP-T1_GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 30 A, 30 A, 0.021 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 100V
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm
Verlustleistung, p-Kanal: 48W
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 48W
Betriebstemperatur, max.: 175°C
Description: VISHAY - SQJ974EP-T1_GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 30 A, 30 A, 0.021 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 100V
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm
Verlustleistung, p-Kanal: 48W
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 48W
Betriebstemperatur, max.: 175°C
на замовлення 1198 шт:
термін постачання 21-31 дні (днів)
| SQJ974EP-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQJ974EP-T1_GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 30 A, 30 A, 0.021 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 100V
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm
Verlustleistung, p-Kanal: 48W
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 48W
Betriebstemperatur, max.: 175°C
Description: VISHAY - SQJ974EP-T1_GE3 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 30 A, 30 A, 0.021 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 30A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 100V
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm
Verlustleistung, p-Kanal: 48W
Drain-Source-Spannung Vds, n-Kanal: 100V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 48W
Betriebstemperatur, max.: 175°C
на замовлення 1198 шт:
термін постачання 21-31 дні (днів)