SQJ992EP-T2_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 15A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 27.37 грн |
| 6000+ | 25.10 грн |
| 9000+ | 23.94 грн |
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Технічний опис SQJ992EP-T2_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 60V 15A PPAK SO8, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: PowerPAK® SO-8 Dual, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 34W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8 Dual, Packaging: Tape & Reel (TR).
Інші пропозиції SQJ992EP-T2_GE3 за ціною від 26.27 грн до 65.99 грн
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SQJ992EP-T2_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 15A PPAK SO8 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 34W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) |
на замовлення 10919 шт: термін постачання 21-31 дні (днів) |
|
| SQJ992EP-T2_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 15A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 15A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 56.2mOhm @ 3.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 446pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 34W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
на замовлення 10919 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 65.99 грн |
| 10+ | 52.12 грн |
| 100+ | 40.55 грн |
| 500+ | 32.26 грн |
| 1000+ | 26.27 грн |