SQJA02EP-T1_GE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 4+ | 88.80 грн |
| 10+ | 63.60 грн |
| 25+ | 55.16 грн |
| 100+ | 45.04 грн |
| 250+ | 44.90 грн |
| 500+ | 41.76 грн |
| 3000+ | 36.87 грн |
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Технічний опис SQJA02EP-T1_GE3 Vishay / Siliconix
Description: VISHAY - SQJA02EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 60 A, 4800 µohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 60A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 68W, Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 4800µohm, SVHC: No SVHC (04-Feb-2026).
Інші пропозиції SQJA02EP-T1_GE3 за ціною від 40.42 грн до 149.90 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQJA02EP-T1_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 60V 60A PPAK SO-8Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
на замовлення 2926 шт: термін постачання 21-31 дні (днів) |
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SQJA02EP-T1_GE3 | VISHAY |
Description: VISHAY - SQJA02EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 60 A, 4800 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 4800µohm SVHC: No SVHC (04-Feb-2026) |
на замовлення 2627 шт: термін постачання 21-31 дні (днів) |
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| SQJA02EP-T1_GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 60A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
на замовлення 2926 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 101.34 грн |
| 10+ | 80.19 грн |
| 100+ | 62.38 грн |
| 500+ | 49.62 грн |
| 1000+ | 40.42 грн |
| SQJA02EP-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQJA02EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 60 A, 4800 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 4800µohm
SVHC: No SVHC (04-Feb-2026)
Description: VISHAY - SQJA02EP-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 60 A, 4800 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 60A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 68W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 4800µohm
SVHC: No SVHC (04-Feb-2026)
на замовлення 2627 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 149.90 грн |
| 10+ | 96.13 грн |
| 100+ | 64.85 грн |
| 500+ | 47.73 грн |
| 1000+ | 40.43 грн |