SQJB04ELP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Drain to Source Voltage (Vdss): 40V
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
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Технічний опис SQJB04ELP-T1_GE3 Vishay Siliconix
Description: VISHAY - SQJB04ELP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 30 A, 7800 µohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: -, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 30A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: PowerPAK SO-8L, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 7800µohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Zweifach n-Kanal, Verlustleistung, n-Kanal: 27W, Betriebstemperatur, max.: 175°C, SVHC: No SVHC (07-Nov-2024).
Інші пропозиції SQJB04ELP-T1_GE3 за ціною від 23.89 грн до 109.42 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQJB04ELP-T1_GE3 | VISHAY |
Description: VISHAY - SQJB04ELP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 30 A, 7800 µohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: PowerPAK SO-8L Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 7800µohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 27W Betriebstemperatur, max.: 175°C SVHC: No SVHC (07-Nov-2024) |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
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SQJB04ELP-T1_GE3 | Vishay / Siliconix |
MOSFETs DUAL N-CHANNEL 40-V (D-S) 175C MOSFE |
на замовлення 264 шт: термін постачання 21-30 дні (днів) |
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SQJB04ELP-T1_GE3 | VISHAY |
Description: VISHAY - SQJB04ELP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 30 A, 7800 µohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 30A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: PowerPAK SO-8L Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 7800µohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 27W Betriebstemperatur, max.: 175°C SVHC: No SVHC (07-Nov-2024) |
на замовлення 2890 шт: термін постачання 21-31 дні (днів) |
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SQJB04ELP-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 30A PPAK SO8 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: PowerPAK® SO-8 Dual Vgs(th) (Max) @ Id: 2.2V @ 250µA Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 27W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Dual Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V |
на замовлення 22366 шт: термін постачання 21-31 дні (днів) |
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Виробник: VISHAY
Description: VISHAY - SQJB04ELP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 30 A, 7800 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: PowerPAK SO-8L
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 7800µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 27W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (07-Nov-2024)
Description: VISHAY - SQJB04ELP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 30 A, 7800 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: PowerPAK SO-8L
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 7800µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 27W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (07-Nov-2024)
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 44.65 грн |
| 500+ | 29.93 грн |
| 1000+ | 25.16 грн |
| SQJB04ELP-T1_GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs DUAL N-CHANNEL 40-V (D-S) 175C MOSFE
MOSFETs DUAL N-CHANNEL 40-V (D-S) 175C MOSFE
на замовлення 264 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 90.45 грн |
| 10+ | 59.98 грн |
| 100+ | 36.37 грн |
| 500+ | 29.25 грн |
| 1000+ | 26.85 грн |
| 3000+ | 23.89 грн |
| SQJB04ELP-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQJB04ELP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 30 A, 7800 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: PowerPAK SO-8L
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 7800µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 27W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (07-Nov-2024)
Description: VISHAY - SQJB04ELP-T1_GE3 - Dual-MOSFET, Zweifach n-Kanal, 40 V, 30 A, 7800 µohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 30A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: PowerPAK SO-8L
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 7800µohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 27W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (07-Nov-2024)
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 106.08 грн |
| 13+ | 67.10 грн |
| 100+ | 44.65 грн |
| 500+ | 29.93 грн |
| 1000+ | 25.16 грн |
| SQJB04ELP-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Description: MOSFET 2N-CH 40V 30A PPAK SO8
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: PowerPAK® SO-8 Dual
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 27W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
на замовлення 22366 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 109.42 грн |
| 10+ | 66.96 грн |
| 100+ | 44.56 грн |
| 500+ | 32.79 грн |
| 1000+ | 29.88 грн |