SQJQ100E-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис SQJQ100E-T1_GE3 Vishay Siliconix
Description: VISHAY - SQJQ100E-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 200 A, 900 µohm, PowerPAK, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 40, Dauer-Drainstrom Id: 200, hazardous: false, Qualifikation: AEC-Q101, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 136, Gate-Source-Schwellenspannung, max.: 2, euEccn: NLR, Verlustleistung: 136, Bauform - Transistor: PowerPAK, Qualifizierungsstandard der Automobilindustrie: AEC-Q101, Anzahl der Pins: 8, Produktpalette: TrenchFET, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 900, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 175, Drain-Source-Durchgangswiderstand: 900, SVHC: No SVHC (10-Jun-2022).
Інші пропозиції SQJQ100E-T1_GE3 за ціною від 101.71 грн до 270.60 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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SQJQ100E-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 200A PPAK 8 X 8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 9023 шт: термін постачання 21-31 дні (днів) |
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SQJQ100E-T1_GE3 | Vishay Semiconductors |
MOSFETs 40V Vds 160A Id AEC-Q101 Qualified |
на замовлення 13796 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SQJQ100E-T1_GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 200A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14780 pF @ 25 V
Qualification: AEC-Q101
на замовлення 9023 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 270.60 грн |
| 10+ | 171.56 грн |
| 100+ | 120.60 грн |
| 500+ | 101.71 грн |
| SQJQ100E-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 40V Vds 160A Id AEC-Q101 Qualified
MOSFETs 40V Vds 160A Id AEC-Q101 Qualified
на замовлення 13796 шт:
термін постачання 21-30 дні (днів)