SQJQ100EL-T1_GE3 Vishay / Siliconix
на замовлення 2000 шт:
термін постачання 217-226 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 238.58 грн |
| 10+ | 197.86 грн |
| 100+ | 138.85 грн |
| 500+ | 123.76 грн |
| 1000+ | 105.64 грн |
| 2000+ | 99.61 грн |
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Технічний опис SQJQ100EL-T1_GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 200A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції SQJQ100EL-T1_GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SQJQ100EL-T1_GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 40V 200A Automotive 5-Pin(4+Tab) PowerPAK T/R |
товару немає в наявності |
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SQJQ100EL-T1_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 200A PPAK 8 X 8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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SQJQ100EL-T1_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 200A PPAK 8 X 8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |