SQJQ112E-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис SQJQ112E-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 296A (Tc), Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції SQJQ112E-T1_GE3 за ціною від 102.65 грн до 326.01 грн
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SQJQ112E-T1_GE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET |
на замовлення 11154 шт: термін постачання 21-30 дні (днів) |
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SQJQ112E-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 296A (Tc) Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2100 шт: термін постачання 21-31 дні (днів) |
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| SQJQ112E-T1_GE3 |
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Виробник: Vishay Semiconductors
MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET
MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET
на замовлення 11154 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 282.69 грн |
| 10+ | 209.59 грн |
| 100+ | 130.58 грн |
| 500+ | 121.50 грн |
| 1000+ | 116.61 грн |
| 2000+ | 102.65 грн |
| SQJQ112E-T1_GE3 |
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Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Qualification: AEC-Q101
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 326.01 грн |
| 10+ | 212.79 грн |
| 100+ | 153.64 грн |
| 500+ | 121.39 грн |
| 1000+ | 113.12 грн |