SQJQ112ER-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 296A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Gull Wing
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2000+ | 129.38 грн |
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Технічний опис SQJQ112ER-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 296A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Gull Wing, Packaging: Tape & Reel (TR).
Інші пропозиції SQJQ112ER-T1_GE3 за ціною від 117.51 грн до 358.60 грн
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SQJQ112ER-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 100 V (D-S) Input Capacitance (Ciss) (Max) @ Vds: 15945 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 272 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 2.53mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 296A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Qualification: AEC-Q101 Grade: Automotive Package / Case: 8-PowerSMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 2531 шт: термін постачання 21-31 дні (днів) |
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SQJQ112ER-T1_GE3 | Виробник : Vishay Semiconductors |
MOSFETs N-CHANNEL 100-V (D-S) 175C MOSFET |
на замовлення 4683 шт: термін постачання 21-30 дні (днів) |
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