SQJQ130EL-T1_GE3 Vishay Semiconductors
на замовлення 3408 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 255.47 грн |
| 10+ | 211.13 грн |
| 25+ | 173.58 грн |
| 100+ | 148.88 грн |
| 250+ | 140.2 грн |
| 500+ | 132.19 грн |
| 1000+ | 116.16 грн |
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Технічний опис SQJQ130EL-T1_GE3 Vishay Semiconductors
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 445A (Tc), Rds On (Max) @ Id, Vgs: 0.52mOhm @ 20A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 455 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23345 pF @ 25 V.
Інші пропозиції SQJQ130EL-T1_GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SQJQ130EL-T1_GE3 | Виробник : VISHAY |
 SQJQ130EL-T1-GE3 SMD N channel transistors |
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SQJQ130EL-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 445A (Tc) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 20A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 455 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23345 pF @ 25 V |
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SQJQ130EL-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 445A (Tc) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 20A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 455 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23345 pF @ 25 V |
товар відсутній |