SQJQ131EL-T1_GE3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 2+ | 245.04 грн |
| 10+ | 202.64 грн |
| 25+ | 171.27 грн |
| 100+ | 143.08 грн |
| 250+ | 138.15 грн |
| 500+ | 126.87 грн |
| 1000+ | 108.54 грн |
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Технічний опис SQJQ131EL-T1_GE3 Vishay Semiconductors
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 600W (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 280A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 8 x 8, Packaging: Tape & Reel (TR).
Інші пропозиції SQJQ131EL-T1_GE3 за ціною від 105.11 грн до 326.69 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQJQ131EL-T1_GE3 | Vishay Siliconix |
 Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 600W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 280A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Cut Tape (CT) |
на замовлення 1229 шт: термін постачання 21-31 дні (днів) |
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| SQJQ131EL-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
на замовлення 1229 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 326.69 грн |
| 10+ | 207.31 грн |
| 100+ | 146.36 грн |
| 500+ | 112.95 грн |
| 1000+ | 105.11 грн |