SQJQ141EL-T1_GE3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 2+ | 249.28 грн |
| 10+ | 206.38 грн |
| 25+ | 173.87 грн |
| 100+ | 145.24 грн |
| 250+ | 141.05 грн |
| 500+ | 129.18 грн |
| 1000+ | 110.33 грн |
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Технічний опис SQJQ141EL-T1_GE3 Vishay Semiconductors
Description: VISHAY - SQJQ141EL-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 390 A, 2000 µohm, PowerPAK, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 390A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2V, euEccn: NLR, Verlustleistung: 600W, Bauform - Transistor: PowerPAK, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 2000µohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції SQJQ141EL-T1_GE3 за ціною від 106.54 грн до 340.53 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQJQ141EL-T1"GE3 | VISHAY |
Description: VISHAY - SQJQ141EL-T1"GE3 - MOSFET, P-CH, 40V, 390A, POWERPAK tariffCode: 0 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 390A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 600W Bauform - Transistor: PowerPAK Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.002ohm directShipCharge: 25 SVHC: To Be Advised |
на замовлення 495 шт: термін постачання 21-31 дні (днів) |
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SQJQ141EL-T1_GE3 | Vishay Siliconix |
 Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 390A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 10A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 62190 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1102 шт: термін постачання 21-31 дні (днів) |
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SQJQ141EL-T1_GE3 | VISHAY |
Description: VISHAY - SQJQ141EL-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 390 A, 2000 µohm, PowerPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 390A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 600W Bauform - Transistor: PowerPAK Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 2000µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 1072 шт: термін постачання 21-31 дні (днів) |
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| SQJQ141EL-T1"GE3 |
Виробник: VISHAY
Description: VISHAY - SQJQ141EL-T1"GE3 - MOSFET, P-CH, 40V, 390A, POWERPAK
tariffCode: 0
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 390A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 600W
Bauform - Transistor: PowerPAK
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.002ohm
directShipCharge: 25
SVHC: To Be Advised
Description: VISHAY - SQJQ141EL-T1"GE3 - MOSFET, P-CH, 40V, 390A, POWERPAK
tariffCode: 0
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 390A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 600W
Bauform - Transistor: PowerPAK
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.002ohm
directShipCharge: 25
SVHC: To Be Advised
на замовлення 495 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 261.50 грн |
| 10+ | 232.18 грн |
| 25+ | 215.07 грн |
| 50+ | 183.06 грн |
| 100+ | 149.43 грн |
| SQJQ141EL-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 10A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 62190 pF @ 25 V
Qualification: AEC-Q101
Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 10A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 62190 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1102 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 329.94 грн |
| 10+ | 209.54 грн |
| 100+ | 148.16 грн |
| 500+ | 114.44 грн |
| 1000+ | 106.54 грн |
| SQJQ141EL-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQJQ141EL-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 390 A, 2000 µohm, PowerPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 390A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 600W
Bauform - Transistor: PowerPAK
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2000µohm
SVHC: No SVHC (25-Jun-2025)
Description: VISHAY - SQJQ141EL-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 390 A, 2000 µohm, PowerPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 390A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 600W
Bauform - Transistor: PowerPAK
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2000µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 1072 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 340.53 грн |
| 10+ | 221.59 грн |
| 100+ | 173.52 грн |
| 500+ | 138.43 грн |
| 1000+ | 124.99 грн |