SQJQ142E-T1_GE3 VISHAY
Виробник: VISHAY
Description: VISHAY - SQJQ142E-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 460 A, 1240 µohm, PowerPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 460A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 500W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PowerPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1240µohm
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Технічний опис SQJQ142E-T1_GE3 VISHAY
Description: VISHAY - SQJQ142E-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 460 A, 1240 µohm, PowerPAK, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 460A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 500W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: PowerPAK, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 1240µohm.
Інші пропозиції SQJQ142E-T1_GE3 за ціною від 69.64 грн до 245.04 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQJQ142E-T1_GE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET |
на замовлення 6286 шт: термін постачання 21-30 дні (днів) |
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SQJQ142E-T1_GE3 | VISHAY |
Description: VISHAY - SQJQ142E-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 460 A, 1240 µohm, PowerPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 460A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 500W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerPAK Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1240µohm |
на замовлення 935 шт: термін постачання 21-31 дні (днів) |
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| SQJQ142E-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 460A PPAK 8 X 8 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6975 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 1.24mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 460A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| SQJQ142E-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 460A PPAK 8 X 8 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6975 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 1.24mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 460A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Cut Tape (CT) |
на замовлення 2718 шт: термін постачання 21-31 дні (днів) |
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| SQJQ142E-T1_GE3 |
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Виробник: Vishay / Siliconix
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
на замовлення 6286 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 241.76 грн |
| 10+ | 154.81 грн |
| 100+ | 95.15 грн |
| 500+ | 77.53 грн |
| 1000+ | 76.12 грн |
| 2000+ | 71.19 грн |
| SQJQ142E-T1_GE3 |
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Виробник: VISHAY
Description: VISHAY - SQJQ142E-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 460 A, 1240 µohm, PowerPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 460A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 500W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PowerPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1240µohm
Description: VISHAY - SQJQ142E-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 460 A, 1240 µohm, PowerPAK, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 460A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 500W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PowerPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1240µohm
на замовлення 935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 245.04 грн |
| 10+ | 159.53 грн |
| 100+ | 113.48 грн |
| 500+ | 87.81 грн |
| SQJQ142E-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 460A PPAK 8 X 8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6975 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 460A PPAK 8 X 8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6975 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 69.64 грн |
| SQJQ142E-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 460A PPAK 8 X 8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6975 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 460A PPAK 8 X 8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6975 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
на замовлення 2718 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 195.06 грн |
| 10+ | 137.90 грн |
| 100+ | 95.75 грн |
| 500+ | 76.46 грн |