SQJQ148E-T1_GE3 Vishay / Siliconix
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 243.17 грн |
| 10+ | 120.27 грн |
| 100+ | 93.61 грн |
| 500+ | 76.06 грн |
| 1000+ | 73.86 грн |
| 2000+ | 69.18 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
31-40 дні (днів)
Мінімальна партія:
2 шт
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Технічний опис SQJQ148E-T1_GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 375A PPAK 8 X 8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 8 x 8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 375A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V, Power Dissipation (Max): 325W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: PowerPAK® 8 x 8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції SQJQ148E-T1_GE3 за ціною від 69.33 грн до 212.88 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SQJQ148E-T1_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 40V 375A PPAK 8 X 8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V Power Dissipation (Max): 325W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| SQJQ148E-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 375A PPAK 8 X 8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 375A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V Power Dissipation (Max): 325W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2946 шт: термін постачання 21-31 дні (днів) |
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| SQJQ148E-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 375A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 375A PPAK 8 X 8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 71.46 грн |
| SQJQ148E-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 375A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 375A PPAK 8 X 8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.88 грн |
| 10+ | 136.52 грн |
| 100+ | 96.07 грн |
| 500+ | 74.98 грн |
| 1000+ | 69.33 грн |