SQJQ148E-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 375A PPAK 8 X 8
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 325W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
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Технічний опис SQJQ148E-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 375A PPAK 8 X 8, Current - Continuous Drain (Id) @ 25°C: 375A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 8 x 8, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 325W (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V.
Інші пропозиції SQJQ148E-T1_GE3 за ціною від 70.61 грн до 216.81 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SQJQ148E-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 375A PPAK 8 X 8 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 325W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 375A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Cut Tape (CT) |
на замовлення 2946 шт: термін постачання 21-31 дні (днів) |
|
| SQJQ148E-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 375A PPAK 8 X 8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 325W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 375A PPAK 8 X 8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 325W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8
Packaging: Cut Tape (CT)
на замовлення 2946 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 216.81 грн |
| 10+ | 139.04 грн |
| 100+ | 97.84 грн |
| 500+ | 76.36 грн |
| 1000+ | 70.61 грн |