SQJQ150E-T1_GE3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 2+ | 180.11 грн |
| 10+ | 129.55 грн |
| 100+ | 81.36 грн |
| 500+ | 68.08 грн |
| 1000+ | 65.30 грн |
| 2000+ | 65.23 грн |
| 4000+ | 61.68 грн |
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Технічний опис SQJQ150E-T1_GE3 Vishay Semiconductors
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 4643 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 187W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 233A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 8 x 8, Packaging: Tape & Reel (TR).
Інші пропозиції SQJQ150E-T1_GE3 за ціною від 66.82 грн до 221.40 грн
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SQJQ150E-T1_GE3 | Виробник : Vishay Siliconix |
 Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4643 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 233A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Cut Tape (CT) |
на замовлення 1960 шт: термін постачання 21-31 дні (днів) |
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SQJQ150E-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4643 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 187W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 233A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Packaging: Tape & Reel (TR) |
товару немає в наявності |