SQJQ906EL-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK8X8
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 187W
Technology: MOSFET (Metal Oxide)
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Технічний опис SQJQ906EL-T1_GE3 Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK8X8, Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: PowerPAK® 8 x 8 Dual, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: PowerPAK® 8 x 8 Dual, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V, Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 187W, Technology: MOSFET (Metal Oxide).
Інші пропозиції SQJQ906EL-T1_GE3 за ціною від 74.71 грн до 222.02 грн
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SQJQ906EL-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2 N-CH 40V POWERPAK8X8 Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 187W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Packaging: Cut Tape (CT) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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SQJQ906EL-T1_GE3 | Vishay Semiconductors |
MOSFETs 40V Vds 160A Id AEC-Q101 Qualified |
на замовлення 3422 шт: термін постачання 21-30 дні (днів) |
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| SQJQ906EL-T1_GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET 2 N-CH 40V POWERPAK8X8
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 187W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Packaging: Cut Tape (CT)
Description: MOSFET 2 N-CH 40V POWERPAK8X8
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3238pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 187W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Packaging: Cut Tape (CT)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 210.92 грн |
| 10+ | 182.26 грн |
| 100+ | 146.52 грн |
| 500+ | 112.97 грн |
| 1000+ | 93.61 грн |
| SQJQ906EL-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 40V Vds 160A Id AEC-Q101 Qualified
MOSFETs 40V Vds 160A Id AEC-Q101 Qualified
на замовлення 3422 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 222.02 грн |
| 10+ | 166.97 грн |
| 100+ | 102.20 грн |
| 500+ | 87.40 грн |
| 1000+ | 82.46 грн |
| 2000+ | 77.53 грн |
| 4000+ | 74.71 грн |