SQJQ960EL-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 63A PPAK8X8
Supplier Device Package: PowerPAK® 8 x 8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 71W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 2000+ | 72.08 грн |
| 4000+ | 68.60 грн |
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Технічний опис SQJQ960EL-T1_GE3 Vishay Siliconix
Description: VISHAY - SQJQ960EL-T1_GE3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 63 A, 63 A, 7000 µohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 63A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 60V, Dauer-Drainstrom Id, n-Kanal: 63A, Drain-Source-Durchgangswiderstand, p-Kanal: 7000µohm, Verlustleistung, p-Kanal: 71W, Drain-Source-Spannung Vds, n-Kanal: 60V, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: PowerPAK, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 7000µohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 71W, Betriebstemperatur, max.: 175°C.
Інші пропозиції SQJQ960EL-T1_GE3 за ціною від 69.90 грн до 235.44 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQJQ960EL-T1_GE3 | VISHAY |
Description: VISHAY - SQJQ960EL-T1_GE3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 63 A, 63 A, 7000 µohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 63A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 60V Dauer-Drainstrom Id, n-Kanal: 63A Drain-Source-Durchgangswiderstand, p-Kanal: 7000µohm Verlustleistung, p-Kanal: 71W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerPAK Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 7000µohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 71W Betriebstemperatur, max.: 175°C |
на замовлення 2015 шт: термін постачання 21-31 дні (днів) |
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SQJQ960EL-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 63A PPAK8X8 Grade: Automotive Supplier Device Package: PowerPAK® 8 x 8 Dual Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 71W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: PowerPAK® 8 x 8 Dual Packaging: Cut Tape (CT) Qualification: AEC-Q101 |
на замовлення 4289 шт: термін постачання 21-31 дні (днів) |
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SQJQ960EL-T1_GE3 | VISHAY |
Description: VISHAY - SQJQ960EL-T1_GE3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 63 A, 63 A, 7000 µohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 63A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V Dauer-Drainstrom Id, n-Kanal: 63A Drain-Source-Durchgangswiderstand, p-Kanal: 7000µohm Verlustleistung, p-Kanal: 71W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerPAK Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 7000µohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 71W Betriebstemperatur, max.: 175°C |
на замовлення 2015 шт: термін постачання 21-31 дні (днів) |
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SQJQ960EL-T1_GE3 | Vishay / Siliconix |
MOSFET 60V Vds Dual N-Ch AEC-Q101 Qualified |
на замовлення 3023 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SQJQ960EL-T1_GE3 |
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Виробник: VISHAY
Description: VISHAY - SQJQ960EL-T1_GE3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 63 A, 63 A, 7000 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 63A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
Dauer-Drainstrom Id, n-Kanal: 63A
Drain-Source-Durchgangswiderstand, p-Kanal: 7000µohm
Verlustleistung, p-Kanal: 71W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 7000µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 71W
Betriebstemperatur, max.: 175°C
Description: VISHAY - SQJQ960EL-T1_GE3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 63 A, 63 A, 7000 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 63A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
Dauer-Drainstrom Id, n-Kanal: 63A
Drain-Source-Durchgangswiderstand, p-Kanal: 7000µohm
Verlustleistung, p-Kanal: 71W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 7000µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 71W
Betriebstemperatur, max.: 175°C
на замовлення 2015 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 107.53 грн |
| 500+ | 80.94 грн |
| 1000+ | 72.62 грн |
| SQJQ960EL-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 63A PPAK8X8
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 71W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 63A PPAK8X8
Grade: Automotive
Supplier Device Package: PowerPAK® 8 x 8 Dual
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1950pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 71W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 8 x 8 Dual
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
на замовлення 4289 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 228.60 грн |
| 10+ | 141.99 грн |
| 100+ | 99.32 грн |
| 500+ | 75.57 грн |
| 1000+ | 69.90 грн |
| SQJQ960EL-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQJQ960EL-T1_GE3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 63 A, 63 A, 7000 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 63A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
Dauer-Drainstrom Id, n-Kanal: 63A
Drain-Source-Durchgangswiderstand, p-Kanal: 7000µohm
Verlustleistung, p-Kanal: 71W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 7000µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 71W
Betriebstemperatur, max.: 175°C
Description: VISHAY - SQJQ960EL-T1_GE3 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 63 A, 63 A, 7000 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 63A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
Dauer-Drainstrom Id, n-Kanal: 63A
Drain-Source-Durchgangswiderstand, p-Kanal: 7000µohm
Verlustleistung, p-Kanal: 71W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAK
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 7000µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 71W
Betriebstemperatur, max.: 175°C
на замовлення 2015 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 235.44 грн |
| 10+ | 152.34 грн |
| 100+ | 107.53 грн |
| 500+ | 80.94 грн |
| 1000+ | 72.62 грн |
| SQJQ960EL-T1_GE3 |
|
Виробник: Vishay / Siliconix
MOSFET 60V Vds Dual N-Ch AEC-Q101 Qualified
MOSFET 60V Vds Dual N-Ch AEC-Q101 Qualified
на замовлення 3023 шт:
термін постачання 21-30 дні (днів)