SQM100N04-2m7_GE3 Vishay / Siliconix
на замовлення 514 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 236.43 грн |
| 10+ | 183.99 грн |
| 100+ | 127.23 грн |
| 500+ | 106.66 грн |
| 800+ | 91.42 грн |
| 2400+ | 86.09 грн |
| 4800+ | 83.80 грн |
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Технічний опис SQM100N04-2m7_GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 100A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V, Power Dissipation (Max): 157W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції SQM100N04-2m7_GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SQM100N04-2M7_GE3 | Виробник : Vishay |
 Trans MOSFET N-CH Si 40V 100A Automotive 3-Pin(2+Tab) D2PAK |
товару немає в наявності |
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SQM100N04-2m7_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 100A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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SQM100N04-2m7_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 100A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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| SQM100N04-2M7-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 100A TO-263 |
товару немає в наявності |
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SQM100N04-2M7-GE3 | Виробник : Vishay / Siliconix |
MOSFET RECOMMENDED ALT 78-SQM100N04-2M7_GE3 |
товару немає в наявності |
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SQM100N04-2m7_GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 98A; 157W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 98A Power dissipation: 157W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 95.5nC Kind of channel: enhancement |
товару немає в наявності |