SQM110N05-06L_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 55V 110A TO263
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Qualification: AEC-Q101
Grade: Automotive
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Технічний опис SQM110N05-06L_GE3 Vishay Siliconix
Description: MOSFET N-CH 55V 110A TO263, Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 157W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), FET Type: N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Technology: MOSFET (Metal Oxide), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції SQM110N05-06L_GE3 за ціною від 85.19 грн до 280.24 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQM110N05-06L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 55V 110A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1115 шт: термін постачання 21-31 дні (днів) |
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SQM110N05-06L_GE3 | Vishay Semiconductors |
MOSFETs 55V 110A 158W AEC-Q101 Qualified |
на замовлення 3048 шт: термін постачання 21-30 дні (днів) |
|
| SQM110N05-06L_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 55V 110A TO263
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 55V 110A TO263
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1115 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 230.17 грн |
| 10+ | 170.96 грн |
| 100+ | 119.70 грн |
| SQM110N05-06L_GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 55V 110A 158W AEC-Q101 Qualified
MOSFETs 55V 110A 158W AEC-Q101 Qualified
на замовлення 3048 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 280.24 грн |
| 10+ | 181.48 грн |
| 100+ | 110.33 грн |
| 500+ | 85.89 грн |
| 800+ | 85.19 грн |