SQM120N02-1M3L_GE3 Vishay / Siliconix
на замовлення 800 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.79 грн |
| 10+ | 174.17 грн |
| 25+ | 142.82 грн |
| 100+ | 122.22 грн |
| 250+ | 115.58 грн |
| 500+ | 103.62 грн |
| 800+ | 87.02 грн |
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Технічний опис SQM120N02-1M3L_GE3 Vishay / Siliconix
Description: MOSFET N-CH 20V 120A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D²Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції SQM120N02-1M3L_GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SQM120N02-1M3L_GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 20V 120A Automotive 3-Pin(2+Tab) D2PAK |
товар відсутній |
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SQM120N02-1M3L_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 20V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 10 V Qualification: AEC-Q101 |
товар відсутній |
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SQM120N02-1M3L_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 20V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 10 V Qualification: AEC-Q101 |
товар відсутній |