SQM120P04-04L"GE3 VISHAY
Виробник: VISHAY
Description: VISHAY - SQM120P04-04L"GE3 - MOSFET, P-CH, 40V, 120A, TO-263
tariffCode: 0
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 120A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 375W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.004ohm
directShipCharge: 25
SVHC: To Be Advised
| Кількість | Ціна |
|---|---|
| 4+ | 252.54 грн |
| 10+ | 192.26 грн |
| 25+ | 172.71 грн |
| 50+ | 144.48 грн |
| 100+ | 116.61 грн |
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Технічний опис SQM120P04-04L"GE3 VISHAY
Description: MOSFET P-CH 40V 120A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13980 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції SQM120P04-04L"GE3 за ціною від 112.42 грн до 305.58 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQM120P04-04L_GE3 | Vishay / Siliconix |
 MOSFETs P-Channel 40V AEC-Q101 Qualified |
на замовлення 17742 шт: термін постачання 21-30 дні (днів) |
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SQM120P04-04L_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13980 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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| SQM120P04-04L_GE3 |
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Виробник: Vishay / Siliconix
MOSFETs P-Channel 40V AEC-Q101 Qualified
MOSFETs P-Channel 40V AEC-Q101 Qualified
на замовлення 17742 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 294.91 грн |
| 10+ | 224.04 грн |
| 100+ | 143.15 грн |
| 500+ | 112.42 грн |
| SQM120P04-04L_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13980 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13980 pF @ 20 V
Qualification: AEC-Q101
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 305.58 грн |
| 10+ | 194.87 грн |
| 100+ | 138.12 грн |