SQM200N04-1m1L_GE3 Vishay Semiconductors
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 314.11 грн |
| 10+ | 254.84 грн |
| 25+ | 214.70 грн |
| 100+ | 178.80 грн |
| 250+ | 173.97 грн |
| 500+ | 159.47 грн |
| 800+ | 128.40 грн |
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Технічний опис SQM200N04-1m1L_GE3 Vishay Semiconductors
Description: MOSFET N-CH 40V 200A TO263-7, Qualification: AEC-Q101, Grade: Automotive, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab).
Інші пропозиції SQM200N04-1m1L_GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SQM200N04-1m1L_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 40V 200A TO263-7Qualification: AEC-Q101 Grade: Automotive Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
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SQM200N04-1m1L_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 200A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263-7 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| SQM200N04-1m1L_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Description: MOSFET N-CH 40V 200A TO263-7
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| SQM200N04-1m1L_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 200A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 413 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20655 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.