SQM40022EM_GE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 2+ | 213.32 грн |
| 10+ | 136.68 грн |
| 100+ | 85.80 грн |
| 500+ | 82.28 грн |
| 800+ | 61.68 грн |
| 2400+ | 58.51 грн |
| 9600+ | 56.61 грн |
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Технічний опис SQM40022EM_GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 150A TO263-7, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V, Qualification: AEC-Q101, Grade: Automotive, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Packaging: Tape & Reel (TR).
Інші пропозиції SQM40022EM_GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SQM40022EM_GE3 | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 40V 150A TO263-7Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V Qualification: AEC-Q101 Grade: Automotive Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
товару немає в наявності |
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SQM40022EM_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 150A TO263-7 Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 1.63mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |