SQM40P10-40L"GE3 VISHAY
Виробник: VISHAY
Description: VISHAY - SQM40P10-40L"GE3 - MOSFET, P-CH, 100V, 40A, TO-263
tariffCode: 0
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.04ohm
directShipCharge: 25
SVHC: To Be Advised
| Кількість | Ціна |
|---|---|
| 4+ | 215.07 грн |
| 10+ | 176.78 грн |
| 25+ | 162.93 грн |
| 50+ | 137.68 грн |
| 100+ | 113.12 грн |
| 500+ | 100.55 грн |
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Технічний опис SQM40P10-40L"GE3 VISHAY
Description: MOSFET P-CH 100V 40A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5295 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції SQM40P10-40L"GE3 за ціною від 73.32 грн до 249.28 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQM40P10-40L_GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 100V 40A TO263Input Capacitance (Ciss) (Max) @ Vds: 5295 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 287 шт: термін постачання 21-31 дні (днів) |
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SQM40P10-40L_GE3 | VISHAY |
Description: VISHAY - SQM40P10-40L_GE3 - Leistungs-MOSFET, p-Kanal, 100 V, 40 A, 0.04 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 40A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 150mW Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: Lead (21-Jan-2025) |
на замовлення 411 шт: термін постачання 21-31 дні (днів) |
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SQM40P10-40L_GE3 | Vishay / Siliconix |
MOSFETs P-Channel 100V AEC-Q101 Qualified |
на замовлення 5340 шт: термін постачання 21-30 дні (днів) |
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| SQM40P10-40L_GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 100V 40A TO263
Input Capacitance (Ciss) (Max) @ Vds: 5295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CH 100V 40A TO263
Input Capacitance (Ciss) (Max) @ Vds: 5295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 287 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 217.60 грн |
| 10+ | 140.40 грн |
| 100+ | 97.62 грн |
| SQM40P10-40L_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQM40P10-40L_GE3 - Leistungs-MOSFET, p-Kanal, 100 V, 40 A, 0.04 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.04ohm
SVHC: Lead (21-Jan-2025)
Description: VISHAY - SQM40P10-40L_GE3 - Leistungs-MOSFET, p-Kanal, 100 V, 40 A, 0.04 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 150mW
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.04ohm
SVHC: Lead (21-Jan-2025)
на замовлення 411 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 246.03 грн |
| 10+ | 158.86 грн |
| 100+ | 117.31 грн |
| SQM40P10-40L_GE3 |
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Виробник: Vishay / Siliconix
MOSFETs P-Channel 100V AEC-Q101 Qualified
MOSFETs P-Channel 100V AEC-Q101 Qualified
на замовлення 5340 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 249.28 грн |
| 10+ | 160.60 грн |
| 100+ | 96.36 грн |
| 500+ | 83.79 грн |
| 800+ | 77.51 грн |
| 2400+ | 73.32 грн |