SQM50P04-09L_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CHANNEL 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6045 pF @ 10 V
Qualification: AEC-Q101
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Технічний опис SQM50P04-09L_GE3 Vishay Siliconix
Description: MOSFET P-CHANNEL 40V 50A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 50A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6045 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції SQM50P04-09L_GE3 за ціною від 74.01 грн до 191.60 грн
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SQM50P04-09L_GE3 | Vishay Siliconix |
Description: MOSFET P-CHANNEL 40V 50A TO263 Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6045 pF @ 10 V Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1466 шт: термін постачання 21-31 дні (днів) |
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SQM50P04-09L_GE3 | Vishay / Siliconix |
MOSFETs P-Chnl 40-V (D-S) AEC-Q101 Qualified |
на замовлення 818 шт: термін постачання 21-30 дні (днів) |
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| SQM50P04-09L_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CHANNEL 40V 50A TO263
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6045 pF @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET P-CHANNEL 40V 50A TO263
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6045 pF @ 10 V
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1466 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 178.41 грн |
| 10+ | 142.94 грн |
| 100+ | 113.76 грн |
| SQM50P04-09L_GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs P-Chnl 40-V (D-S) AEC-Q101 Qualified
MOSFETs P-Chnl 40-V (D-S) AEC-Q101 Qualified
на замовлення 818 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 191.60 грн |
| 10+ | 157.25 грн |
| 100+ | 108.54 грн |
| 250+ | 107.84 грн |
| 500+ | 100.79 грн |
| 800+ | 78.24 грн |
| 2400+ | 74.01 грн |