SQP90142E_GE3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 2+ | 213.80 грн |
| 10+ | 177.51 грн |
| 25+ | 145.19 грн |
| 100+ | 124.75 грн |
| 250+ | 117.71 грн |
| 500+ | 110.66 грн |
| 1000+ | 95.15 грн |
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Технічний опис SQP90142E_GE3 Vishay Semiconductors
Description: MOSFET N-CH 200V 78.5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 78.5A (Tc), Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220AB, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції SQP90142E_GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| SQP90142E_GE3 | Vishay Siliconix |
 MOSFET N-CH 200V 78.5A TO220AB Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
SQP90142E_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 78.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78.5A (Tc) Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| SQP90142E_GE3 |
|
Виробник: Vishay Siliconix
MOSFET N-CH 200V 78.5A TO220AB Транзистори
MOSFET N-CH 200V 78.5A TO220AB Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| SQP90142E_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 200V 78.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78.5A (Tc)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 200V 78.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78.5A (Tc)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 20A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.